¡Felicidades! Aplica BIENVENIDO15 y ahorra 15% en tu primera compra ¿Necesitas ayuda?

Envío gratis a partir de $389.00 (Consulta T&C)

eBook
sotano_covers_ebooks/9789811/9789811061653.jpg

Research On Chemical Mechanical Polishing Mechanism Of Novel Diffusion Barrier Ru For Cu Interconnect - ENG

eBook

$2,780.00
Disponible
ISBN: 9789811061653
Formato: Page Fidelity
Idioma: Inglés
Editorial: Springer Nature
Tema: Tecnología e ingeniería
Subtema: Manufactura
Año de publicación: 2017-09-06

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

imagen cookie  Este sitio web utiliza cookies para mejorar la experiencia del usuario y asegurar su funcionamiento con eficacia. Al utilizarlo usted acepta el uso de cookies.


Carrito de compra

Su pedido cuenta con 0 productos